ON Semiconductor - NVD5117PLT4G-VF01

KEY Part #: K6416494

NVD5117PLT4G-VF01 Bei (USD) [72890pcs Hisa]

  • 1 pcs$0.53644
  • 2,500 pcs$0.39662

Nambari ya Sehemu:
NVD5117PLT4G-VF01
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET P-CH 60V 61A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Viwango - RF and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVD5117PLT4G-VF01 Sifa za Bidhaa

Nambari ya Sehemu : NVD5117PLT4G-VF01
Mzalishaji : ON Semiconductor
Maelezo : MOSFET P-CH 60V 61A DPAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11A (Ta), 61A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 16 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4800pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 4.1W (Ta), 118W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DPAK
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63