IXYS - IXFA7N100P

KEY Part #: K6394808

IXFA7N100P Bei (USD) [24024pcs Hisa]

  • 1 pcs$1.98261
  • 50 pcs$1.97275

Nambari ya Sehemu:
IXFA7N100P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 1000V 7A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in IXYS IXFA7N100P electronic components. IXFA7N100P can be shipped within 24 hours after order. If you have any demands for IXFA7N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA7N100P Sifa za Bidhaa

Nambari ya Sehemu : IXFA7N100P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 1000V 7A D2PAK
Mfululizo : HiPerFET™, PolarP2™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.9 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 6V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2590pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263 (IXFA)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB