Diodes Incorporated - DMN3018SSS-13

KEY Part #: K6394263

DMN3018SSS-13 Bei (USD) [714012pcs Hisa]

  • 1 pcs$0.05180
  • 2,500 pcs$0.04666

Nambari ya Sehemu:
DMN3018SSS-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N CH 30V 7.3A 8-SO.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Transistors - IGBTs - Arrays and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN3018SSS-13 electronic components. DMN3018SSS-13 can be shipped within 24 hours after order. If you have any demands for DMN3018SSS-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3018SSS-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN3018SSS-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N CH 30V 7.3A 8-SO
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 21 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 13.2nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 697pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.4W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SO
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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