Infineon Technologies - IRF6619TR1PBF

KEY Part #: K6402000

IRF6619TR1PBF Bei (USD) [55206pcs Hisa]

  • 1 pcs$0.71180
  • 1,000 pcs$0.70826

Nambari ya Sehemu:
IRF6619TR1PBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 20V 30A DIRECTFET.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Viwango - RF, Transistors - Bipolar (BJT) - RF and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF6619TR1PBF Sifa za Bidhaa

Nambari ya Sehemu : IRF6619TR1PBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 20V 30A DIRECTFET
Mfululizo : HEXFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 30A (Ta), 150A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.45V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 57nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5040pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.8W (Ta), 89W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DIRECTFET™ MX
Kifurushi / Kesi : DirectFET™ Isometric MX

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