Toshiba Semiconductor and Storage - RN1109(T5L,F,T)

KEY Part #: K6527871

[4528pcs Hisa]


    Nambari ya Sehemu:
    RN1109(T5L,F,T)
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    TRANS PREBIAS NPN 0.1W SSM.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Thyristors - SCR and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage RN1109(T5L,F,T) electronic components. RN1109(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1109(T5L,F,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN1109(T5L,F,T) Sifa za Bidhaa

    Nambari ya Sehemu : RN1109(T5L,F,T)
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : TRANS PREBIAS NPN 0.1W SSM
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : NPN - Pre-Biased
    Sasa - Mtoza (Ic) (Max) : 100mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
    Upinzani - Msingi (R1) : 47 kOhms
    Upinzani - Base ya Emitter (R2) : 22 kOhms
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
    Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Sasa - Ushuru Mtoaji : 500nA
    Mara kwa mara - Mpito : 250MHz
    Nguvu - Max : 100mW
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : SC-75, SOT-416
    Kifurushi cha Kifaa cha Mtoaji : SSM