Vishay Semiconductor Diodes Division - BAV21WS-HE3-18

KEY Part #: K6454448

BAV21WS-HE3-18 Bei (USD) [2097832pcs Hisa]

  • 1 pcs$0.01763
  • 10,000 pcs$0.01631

Nambari ya Sehemu:
BAV21WS-HE3-18
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - RF, Viwango - Zener - Arrays, Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division BAV21WS-HE3-18 electronic components. BAV21WS-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV21WS-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21WS-HE3-18 Sifa za Bidhaa

Nambari ya Sehemu : BAV21WS-HE3-18
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 200V 250MA SOD323
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 250mA (DC)
Voltage - Mbele (Vf) (Max) @ Kama : 1.25V @ 200mA
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 100nA @ 200V
Uwezo @ Vr, F : 1.5pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-76, SOD-323
Kifurushi cha Kifaa cha Mtoaji : SOD-323
Joto la Kufanya kazi - Junction : 150°C (Max)

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    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM