ON Semiconductor - NSVMMUN2112LT1G

KEY Part #: K6527233

NSVMMUN2112LT1G Bei (USD) [1349515pcs Hisa]

  • 1 pcs$0.02741
  • 12,000 pcs$0.02193

Nambari ya Sehemu:
NSVMMUN2112LT1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PREBIAS PNP 0.246W SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor NSVMMUN2112LT1G electronic components. NSVMMUN2112LT1G can be shipped within 24 hours after order. If you have any demands for NSVMMUN2112LT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSVMMUN2112LT1G Sifa za Bidhaa

Nambari ya Sehemu : NSVMMUN2112LT1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS PREBIAS PNP 0.246W SOT23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 22 kOhms
Upinzani - Base ya Emitter (R2) : 22 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 246mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)

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