ISSI, Integrated Silicon Solution Inc - IS43LR32160C-6BL

KEY Part #: K935731

IS43LR32160C-6BL Bei (USD) [13800pcs Hisa]

  • 1 pcs$4.60786
  • 240 pcs$4.58493

Nambari ya Sehemu:
IS43LR32160C-6BL
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M, 1.8V, 166Mhz Mobile DDR
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kumbukumbu - Watawala, Maingiliano - Maalum, Mantiki - Buffa, Madereva, Wapokeaji, Waendeshaji , PMIC - Usimamizi wa Batri, PMIC - Onyesha Madereva, Upataji wa data - Potentiometers za dijiti, Upataji wa data - Kidhibiti cha Skrini ya Kugusa and Mantiki - mantiki maalum ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43LR32160C-6BL electronic components. IS43LR32160C-6BL can be shipped within 24 hours after order. If you have any demands for IS43LR32160C-6BL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43LR32160C-6BL Sifa za Bidhaa

Nambari ya Sehemu : IS43LR32160C-6BL
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 90TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - Mobile LPDDR
Saizi ya kumbukumbu : 512Mb (16M x 32)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 12ns
Wakati wa Upataji : 5.5ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 90-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 90-TFBGA (8x13)

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