DF200R12W1H3FB11BOMA1 Bei (USD) [1128pcs Hisa]
- 1 pcs$38.34155
- Nambari ya Sehemu:
- DF200R12W1H3FB11BOMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOD DIODE BRIDGE EASY1B-2-1.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies DF200R12W1H3FB11BOMA1 electronic components. DF200R12W1H3FB11BOMA1 can be shipped within 24 hours after order. If you have any demands for DF200R12W1H3FB11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF200R12W1H3FB11BOMA1 Sifa za Bidhaa
Nambari ya Sehemu :
DF200R12W1H3FB11BOMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOD DIODE BRIDGE EASY1B-2-1
Mfululizo :
EasyPACK™
Hali ya Sehemu :
Active
Aina ya IGBT :
Trench Field Stop
Usanidi :
Three Phase Inverter
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
30A
Nguvu - Max :
20mW
Vce (on) (Max) @ Vge, Ic :
1.45V @ 15V, 30A
Sasa - Ushuru Mtoaji :
1mA
Uingilivu Ufungaji (Wakuu) @ Vce :
6.15nF @ 25V
Uingizaji :
Standard
Mtaalam wa NTC :
Yes
Joto la Kufanya kazi :
-40°C ~ 150°C
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
Module
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