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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Duru Jumuishi (ICs)
  4. Kumbukumbu
  5. AS4C16M16SA-6BAN

Alliance Memory, Inc. - AS4C16M16SA-6BAN

KEY Part #: K937874

AS4C16M16SA-6BAN Bei (USD) [18403pcs Hisa]

  • 1 pcs$2.39741
  • 10 pcs$2.18896
  • 25 pcs$2.14709
  • 50 pcs$2.13246
  • 100 pcs$1.91295
  • 250 pcs$1.90559
  • 500 pcs$1.78664
  • 1,000 pcs$1.71062
Nambari ya Sehemu:
AS4C16M16SA-6BAN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 256M PARALLEL 54TFBGA. DRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Linear - Amplifiers - Sauti, Iliyoingizwa - Mfumo kwenye Chip (SoC), Linear - Amplifiers - Chombo, OP Amps, Buffer Amps, Maingiliano - Wasafirishaji, Watangazaji, Wabadili, Saa / Saa - Mistari ya Kuchelewesha, PMIC - Wasimamizi, Maingiliano - Madereva, Wapokeaji, Waendeshaji kup and Maingiliano - UARTs (Transformer ya Universal Asyn ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C16M16SA-6BAN electronic components. AS4C16M16SA-6BAN can be shipped within 24 hours after order. If you have any demands for AS4C16M16SA-6BAN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C16M16SA-6BAN Sifa za Bidhaa

Nambari ya Sehemu : AS4C16M16SA-6BAN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 256M PARALLEL 54TFBGA
Mfululizo : Automotive, AEC-Q100
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM
Saizi ya kumbukumbu : 256Mb (16M x 16)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 12ns
Wakati wa Upataji : 5ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 3V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 105°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 54-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 54-TFBGA (8x8)

Habari mpya kabisa

Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low Power CMOS SRAM
Alliance Memory Low-Power DDR2 SDRAM
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