Toshiba Semiconductor and Storage - HN3A51F(TE85L,F)

KEY Part #: K6392128

[6282pcs Hisa]


    Nambari ya Sehemu:
    HN3A51F(TE85L,F)
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    TRANS 2PNP 120V 0.1A SM6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Viwango - Zener - Moja, Viwango - RF and Transistors - FET, MOSFETs - Moja ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage HN3A51F(TE85L,F) electronic components. HN3A51F(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN3A51F(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN3A51F(TE85L,F) Sifa za Bidhaa

    Nambari ya Sehemu : HN3A51F(TE85L,F)
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : TRANS 2PNP 120V 0.1A SM6
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : 2 PNP (Dual)
    Sasa - Mtoza (Ic) (Max) : 100mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 120V
    Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
    Sasa - Ushuru Mtoaji : 100nA (ICBO)
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
    Nguvu - Max : 300mW
    Mara kwa mara - Mpito : 100MHz
    Joto la Kufanya kazi : 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : SC-74, SOT-457
    Kifurushi cha Kifaa cha Mtoaji : SM6

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