UGB12JTHE3/45 Bei (USD) [2056pcs Hisa]
- 1,000 pcs$0.34895
- Nambari ya Sehemu:
- UGB12JTHE3/45
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 600V 12A TO263AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division UGB12JTHE3/45 electronic components. UGB12JTHE3/45 can be shipped within 24 hours after order. If you have any demands for UGB12JTHE3/45, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB12JTHE3/45 Sifa za Bidhaa
Nambari ya Sehemu :
UGB12JTHE3/45
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 600V 12A TO263AB
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
12A
Voltage - Mbele (Vf) (Max) @ Kama :
1.75V @ 12A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
50ns
Sasa - Rejea kuvuja @ Vr :
30µA @ 600V
Uwezo @ Vr, F :
-
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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IDB15E60
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
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