Nambari ya Sehemu :
1N5420US
Mzalishaji :
Microsemi Corporation
Maelezo :
DIODE GEN PURP 600V 3A D5B
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
3A
Voltage - Mbele (Vf) (Max) @ Kama :
1.5V @ 9A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
400ns
Sasa - Rejea kuvuja @ Vr :
1µA @ 600V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
E-MELF
Kifurushi cha Kifaa cha Mtoaji :
D-5B
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C