TSM80N1R2CI C0G Bei (USD) [45618pcs Hisa]
- 1 pcs$0.85711
- Nambari ya Sehemu:
- TSM80N1R2CI C0G
- Mzalishaji:
- Taiwan Semiconductor Corporation
- Maelezo ya kina:
- MOSFET N-CH 800V 5.5A ITO220.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Taiwan Semiconductor Corporation TSM80N1R2CI C0G electronic components. TSM80N1R2CI C0G can be shipped within 24 hours after order. If you have any demands for TSM80N1R2CI C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM80N1R2CI C0G Sifa za Bidhaa
Nambari ya Sehemu :
TSM80N1R2CI C0G
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
MOSFET N-CH 800V 5.5A ITO220
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.2 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
19.4nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
685pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
25W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
ITO-220AB
Kifurushi / Kesi :
TO-220-3 Full Pack, Isolated Tab
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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