SI5913DC-T1-E3 Bei (USD) [1452pcs Hisa]
- 3,000 pcs$0.09104
- Nambari ya Sehemu:
- SI5913DC-T1-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 20V 4A 1206-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI5913DC-T1-E3 electronic components. SI5913DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5913DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5913DC-T1-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SI5913DC-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 4A 1206-8
Mfululizo :
LITTLE FOOT®
Hali ya Sehemu :
Obsolete
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
84 mOhm @ 3.7A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
330pF @ 10V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
1.7W (Ta), 3.1W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
1206-8 ChipFET™
Kifurushi / Kesi :
8-SMD, Flat Lead
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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