ON Semiconductor - FDB0630N1507L

KEY Part #: K6392827

FDB0630N1507L Bei (USD) [25024pcs Hisa]

  • 1 pcs$1.65517
  • 800 pcs$1.64694

Nambari ya Sehemu:
FDB0630N1507L
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 150V 130A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Moduli za Dereva za Nguvu, Thyristors - SCR, Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB0630N1507L Sifa za Bidhaa

Nambari ya Sehemu : FDB0630N1507L
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 150V 130A
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 130A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6.4 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 135nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 9895pF @ 75V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.8W (Ta), 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263)
Kifurushi / Kesi : TO-263-7, D²Pak (6 Leads + Tab)

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