Infineon Technologies - IPB120N04S402ATMA1

KEY Part #: K6402084

IPB120N04S402ATMA1 Bei (USD) [79838pcs Hisa]

  • 1 pcs$0.48975
  • 1,000 pcs$0.44934

Nambari ya Sehemu:
IPB120N04S402ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 40V 120A TO263-3-2.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N04S402ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB120N04S402ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 40V 120A TO263-3-2
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 110µA
Malango ya Lango (Qg) (Max) @ Vgs : 134nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 10740pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 158W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263AB)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB