Diodes Incorporated - ZXMN3A01E6TA

KEY Part #: K6394189

ZXMN3A01E6TA Bei (USD) [338563pcs Hisa]

  • 1 pcs$0.10925
  • 3,000 pcs$0.09778

Nambari ya Sehemu:
ZXMN3A01E6TA
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 30V 2.4A SOT-23-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Transistors - FET, MOSFETs - Moja and Thyristors - TRIAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3A01E6TA Sifa za Bidhaa

Nambari ya Sehemu : ZXMN3A01E6TA
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 30V 2.4A SOT-23-6
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 3.9nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 190pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.1W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-6
Kifurushi / Kesi : SOT-23-6