Toshiba Semiconductor and Storage - RN2906(T5L,F,T)

KEY Part #: K6529743

[2063pcs Hisa]


    Nambari ya Sehemu:
    RN2906(T5L,F,T)
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    TRANS 2PNP PREBIAS 0.2W US6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Arrays and Transistors - IGBTs - Moduli ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage RN2906(T5L,F,T) electronic components. RN2906(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN2906(T5L,F,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2906(T5L,F,T) Sifa za Bidhaa

    Nambari ya Sehemu : RN2906(T5L,F,T)
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : TRANS 2PNP PREBIAS 0.2W US6
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : 2 PNP - Pre-Biased (Dual)
    Sasa - Mtoza (Ic) (Max) : 100mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
    Upinzani - Msingi (R1) : 4.7 kOhms
    Upinzani - Base ya Emitter (R2) : 47 kOhms
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Sasa - Ushuru Mtoaji : 100nA (ICBO)
    Mara kwa mara - Mpito : 200MHz
    Nguvu - Max : 200mW
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
    Kifurushi cha Kifaa cha Mtoaji : US6

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