DMN3012LDG-13 Bei (USD) [126375pcs Hisa]
- 1 pcs$0.29268
- Nambari ya Sehemu:
- DMN3012LDG-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET BVDSS 25V-30V POWERDI333.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Ushirikiano uliopangwa, Transistors - JFETs, Thyristors - SCR and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN3012LDG-13 electronic components. DMN3012LDG-13 can be shipped within 24 hours after order. If you have any demands for DMN3012LDG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3012LDG-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN3012LDG-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET BVDSS 25V-30V POWERDI333
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta), 20A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id :
2.1V @ 250µA, 1.15V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
6.1nC @ 4.5V, 12.6nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
850pF @ 15V, 1480pF @ 15V
Nguvu - Max :
2.2W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerLDFN
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
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