NSVMUN531335DW1T1G Bei (USD) [815782pcs Hisa]
- 1 pcs$0.04534
- 3,000 pcs$0.04440
- 6,000 pcs$0.04193
- 15,000 pcs$0.03823
- 30,000 pcs$0.03577
- Nambari ya Sehemu:
- NSVMUN531335DW1T1G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- TRANS PREBIAS NPN/PNP 50V 6TSSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Arrays and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor NSVMUN531335DW1T1G electronic components. NSVMUN531335DW1T1G can be shipped within 24 hours after order. If you have any demands for NSVMUN531335DW1T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSVMUN531335DW1T1G Sifa za Bidhaa
Nambari ya Sehemu :
NSVMUN531335DW1T1G
Mzalishaji :
ON Semiconductor
Maelezo :
TRANS PREBIAS NPN/PNP 50V 6TSSOP
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya Transistor :
1 NPN Pre-Biased, 1 PNP
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
47 kOhms, 2.2 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
187mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
SC-88/SC70-6/SOT-363
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