SIA427DJ-T1-GE3 Bei (USD) [414489pcs Hisa]
- 1 pcs$0.08924
- 3,000 pcs$0.08429
- Nambari ya Sehemu:
- SIA427DJ-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 8V 12A SC-70-6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCRs - Moduli, Viwango - Zener - Moja, Viwango - Rectifiers - Arrays and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIA427DJ-T1-GE3 electronic components. SIA427DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA427DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA427DJ-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIA427DJ-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 8V 12A SC-70-6
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
8V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.2V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
16 mOhm @ 8.2A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
50nC @ 5V
Vgs (Max) :
±5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2300pF @ 4V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.5W (Ta), 19W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SC-70-6 Single
Kifurushi / Kesi :
PowerPAK® SC-70-6
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