Vishay Siliconix - SISA66DN-T1-GE3

KEY Part #: K6396214

SISA66DN-T1-GE3 Bei (USD) [225483pcs Hisa]

  • 1 pcs$0.16404

Nambari ya Sehemu:
SISA66DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 30V 40A POWERPAK1212.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SISA66DN-T1-GE3 electronic components. SISA66DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISA66DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISA66DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SISA66DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 30V 40A POWERPAK1212
Mfululizo : TrenchFET® Gen IV
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.3 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : +20V, -16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3014pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 52W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8
Kifurushi / Kesi : PowerPAK® 1212-8