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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Duru Jumuishi (ICs)
  4. Kumbukumbu
  5. IS43R16320E-6BLI-TR

ISSI, Integrated Silicon Solution Inc - IS43R16320E-6BLI-TR

KEY Part #: K937208

IS43R16320E-6BLI-TR Bei (USD) [16249pcs Hisa]

  • 1 pcs$2.82007
Nambari ya Sehemu:
IS43R16320E-6BLI-TR
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 166MHZ. DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT, T&R
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Usajili wa Voltage - Kusudi Maalum, PMIC - Madereva wa Magari, Watawala, Mantiki - Kazi za Basi la Universal, Mantiki - Buffa, Madereva, Wapokeaji, Waendeshaji , Kumbukumbu - Watawala, PMIC - Wasimamizi, Iliyoingizwa - Microcontroller - Maombi Maalum and Linear - Amplifiers - Chombo, OP Amps, Buffer Amps ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43R16320E-6BLI-TR electronic components. IS43R16320E-6BLI-TR can be shipped within 24 hours after order. If you have any demands for IS43R16320E-6BLI-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43R16320E-6BLI-TR Sifa za Bidhaa

Nambari ya Sehemu : IS43R16320E-6BLI-TR
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 166MHZ
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR
Saizi ya kumbukumbu : 512Mb (32M x 16)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 700ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.3V ~ 2.7V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TFBGA (13x8)

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