Vishay Semiconductor Diodes Division - RGF1M-E3/67A

KEY Part #: K6455436

RGF1M-E3/67A Bei (USD) [550125pcs Hisa]

  • 1 pcs$0.07095
  • 1,500 pcs$0.07060
  • 3,000 pcs$0.06437
  • 7,500 pcs$0.06021
  • 10,500 pcs$0.05606

Nambari ya Sehemu:
RGF1M-E3/67A
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 1KV 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 1000Volt 500ns 30 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Ushirikiano uliopangwa and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division RGF1M-E3/67A electronic components. RGF1M-E3/67A can be shipped within 24 hours after order. If you have any demands for RGF1M-E3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGF1M-E3/67A Sifa za Bidhaa

Nambari ya Sehemu : RGF1M-E3/67A
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 1KV 1A DO214BA
Mfululizo : SUPERECTIFIER®
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 500ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 1000V
Uwezo @ Vr, F : 8.5pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214BA
Kifurushi cha Kifaa cha Mtoaji : DO-214BA (GF1)
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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