Diodes Incorporated - ZXMN3G32DN8TA

KEY Part #: K6523078

ZXMN3G32DN8TA Bei (USD) [193225pcs Hisa]

  • 1 pcs$0.19142
  • 500 pcs$0.10528

Nambari ya Sehemu:
ZXMN3G32DN8TA
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CH 30V 5.5A 8SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3G32DN8TA Sifa za Bidhaa

Nambari ya Sehemu : ZXMN3G32DN8TA
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CH 30V 5.5A 8SOIC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.5A
Njia ya Kutumia (Max) @ Id, Vgs : 28 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 10.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 472pF @ 15V
Nguvu - Max : 1.8W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SO

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