Nambari ya Sehemu :
TK35N65W,S1F
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 650V 35A TO-247
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
35A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
80 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 2.1mA
Malango ya Lango (Qg) (Max) @ Vgs :
100nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4100pF @ 300V
Kuondoa Nguvu (Max) :
270W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247
Kifurushi / Kesi :
TO-247-3