Infineon Technologies - IPI65R190CFDXKSA1

KEY Part #: K6417916

IPI65R190CFDXKSA1 Bei (USD) [46144pcs Hisa]

  • 1 pcs$0.84735
  • 500 pcs$0.77742

Nambari ya Sehemu:
IPI65R190CFDXKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 650V 17.5A TO262.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Viwango - RF, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI65R190CFDXKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPI65R190CFDXKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 650V 17.5A TO262
Mfululizo : CoolMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 17.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 730µA
Malango ya Lango (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1850pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 151W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO262-3
Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA

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