Nambari ya Sehemu :
1N8026-GA
Mzalishaji :
GeneSiC Semiconductor
Maelezo :
DIODE SILICON 1.2KV 8A TO257
Hali ya Sehemu :
Obsolete
Aina ya Diode :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
8A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1.6V @ 2.5A
Kasi :
No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
0ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 1200V
Uwezo @ Vr, F :
237pF @ 1V, 1MHz
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-257-3
Kifurushi cha Kifaa cha Mtoaji :
TO-257
Joto la Kufanya kazi - Junction :
-55°C ~ 250°C