Vishay Semiconductor Diodes Division - 1N6484HE3/97

KEY Part #: K6457833

1N6484HE3/97 Bei (USD) [704650pcs Hisa]

  • 1 pcs$0.05249
  • 10,000 pcs$0.04757

Nambari ya Sehemu:
1N6484HE3/97
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0 Amp 30 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli, Viwango - RF and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division 1N6484HE3/97 electronic components. 1N6484HE3/97 can be shipped within 24 hours after order. If you have any demands for 1N6484HE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6484HE3/97 Sifa za Bidhaa

Nambari ya Sehemu : 1N6484HE3/97
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 1KV 1A DO213AB
Mfululizo : SUPERECTIFIER®
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 1A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 10µA @ 1000V
Uwezo @ Vr, F : 8pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-213AB, MELF (Glass)
Kifurushi cha Kifaa cha Mtoaji : DO-213AB
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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