BAS116,235 Bei (USD) [2788354pcs Hisa]
- 1 pcs$0.01526
- 10,000 pcs$0.01518
- 30,000 pcs$0.01429
- 50,000 pcs$0.01339
- 100,000 pcs$0.01190
- Nambari ya Sehemu:
- BAS116,235
- Mzalishaji:
- Nexperia USA Inc.
- Maelezo ya kina:
- DIODE GEN PURP 75V 215MA SOT23. Diodes - General Purpose, Power, Switching DIODE LOW LEAKAGE TAPE-11
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Moduli za Dereva za Nguvu and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Nexperia USA Inc. BAS116,235 electronic components. BAS116,235 can be shipped within 24 hours after order. If you have any demands for BAS116,235, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS116,235 Sifa za Bidhaa
Nambari ya Sehemu :
BAS116,235
Mzalishaji :
Nexperia USA Inc.
Maelezo :
DIODE GEN PURP 75V 215MA SOT23
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
75V
Sasa - Wastani Aliyerekebishwa (Io) :
215mA (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1.25V @ 150mA
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
3µs
Sasa - Rejea kuvuja @ Vr :
5nA @ 75V
Uwezo @ Vr, F :
2pF @ 0V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
TO-236AB
Joto la Kufanya kazi - Junction :
150°C (Max)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
-
BAL99E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Sehemu za Moto
- IDT06S60CHKSA1
- GP10A-5016M3/54
- 1N4006GPE-M3/73
- D740N36TXPSA1
- UF4005 BK
- JANS1N6677UR-1
- BA157GP-M3/54
- GP02-40-M3/73
- 1N4004GPE-E3/93
- RU 4DS
- VS-MBRD330TRLPBF
- SK310B/TR13
- SB10-05A3-BT
- DLA11C-TR-E
- GPA804-BP
- 1N5401-AP
- SS32HE3/57T
- SS25HE3/52T
- SS320HE-TP
- RJU6053WDPP-M0#T2
- S3GHE3/57T
- RS3BHE3/9AT
- RGP5020-E3/54
- GPP15M-E3/54
- GI917-E3/54
- FGP30D-E3/73
- MBRD835L
- MR856
- MBRS3201T3
- SIDC53D120H6X1SA3
- VS-MUR1520PBF
- 80EPS08
- S3AB-13
- FR1J-LTP
- D255K06BXPSA1
- STPSC5H12D
- RGF1D-E3/67A
- RB068LAM150TR
- RF01VM2STE-17
- LS103A-GS18