Diodes Incorporated - DDTC115ECA-7-F

KEY Part #: K6527065

DDTC115ECA-7-F Bei (USD) [2141057pcs Hisa]

  • 1 pcs$0.01728
  • 3,000 pcs$0.01601
  • 6,000 pcs$0.01392
  • 15,000 pcs$0.01183
  • 30,000 pcs$0.01114
  • 75,000 pcs$0.01044
  • 150,000 pcs$0.00905

Nambari ya Sehemu:
DDTC115ECA-7-F
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
TRANS PREBIAS NPN 200MW SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - RF and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DDTC115ECA-7-F electronic components. DDTC115ECA-7-F can be shipped within 24 hours after order. If you have any demands for DDTC115ECA-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTC115ECA-7-F Sifa za Bidhaa

Nambari ya Sehemu : DDTC115ECA-7-F
Mzalishaji : Diodes Incorporated
Maelezo : TRANS PREBIAS NPN 200MW SOT23-3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 100 kOhms
Upinzani - Base ya Emitter (R2) : 100 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 82 @ 5mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3

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