Infineon Technologies - IRLR3410TRRPBF

KEY Part #: K6420631

IRLR3410TRRPBF Bei (USD) [221309pcs Hisa]

  • 1 pcs$0.16713
  • 3,000 pcs$0.16037

Nambari ya Sehemu:
IRLR3410TRRPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V 17A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR3410TRRPBF Sifa za Bidhaa

Nambari ya Sehemu : IRLR3410TRRPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V 17A DPAK
Mfululizo : HEXFET®
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 17A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 105 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 34nC @ 5V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 800pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 79W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D-Pak
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63