Infineon Technologies - FD150R12RT4HOSA1

KEY Part #: K6532517

FD150R12RT4HOSA1 Bei (USD) [1637pcs Hisa]

  • 1 pcs$26.44980

Nambari ya Sehemu:
FD150R12RT4HOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT MODULE 1200V 150A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCRs - Moduli, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Infineon Technologies FD150R12RT4HOSA1 electronic components. FD150R12RT4HOSA1 can be shipped within 24 hours after order. If you have any demands for FD150R12RT4HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD150R12RT4HOSA1 Sifa za Bidhaa

Nambari ya Sehemu : FD150R12RT4HOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT MODULE 1200V 150A
Mfululizo : C
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Usanidi : Single Chopper
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 150A
Nguvu - Max : 790W
Vce (on) (Max) @ Vge, Ic : 2.15V @ 15V, 150A
Sasa - Ushuru Mtoaji : 1mA
Uingilivu Ufungaji (Wakuu) @ Vce : 9.3nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : No
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module

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