Taiwan Semiconductor Corporation - ESH3B M6G

KEY Part #: K6458060

ESH3B M6G Bei (USD) [838004pcs Hisa]

  • 1 pcs$0.04414

Nambari ya Sehemu:
ESH3B M6G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
DIODE GEN PURP 100V 3A DO214AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Ushirikiano uliopangwa and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Taiwan Semiconductor Corporation ESH3B M6G electronic components. ESH3B M6G can be shipped within 24 hours after order. If you have any demands for ESH3B M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3B M6G Sifa za Bidhaa

Nambari ya Sehemu : ESH3B M6G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : DIODE GEN PURP 100V 3A DO214AB
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 900mV @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 20ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 100V
Uwezo @ Vr, F : 45pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji : DO-214AB (SMC)
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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