ON Semiconductor - HGTD3N60C3S9A

KEY Part #: K6424371

[9332pcs Hisa]


    Nambari ya Sehemu:
    HGTD3N60C3S9A
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    IGBT 600V 6A 33W TO252AA.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika and Viwango - Rectifiers - Arrays ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor HGTD3N60C3S9A electronic components. HGTD3N60C3S9A can be shipped within 24 hours after order. If you have any demands for HGTD3N60C3S9A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HGTD3N60C3S9A Sifa za Bidhaa

    Nambari ya Sehemu : HGTD3N60C3S9A
    Mzalishaji : ON Semiconductor
    Maelezo : IGBT 600V 6A 33W TO252AA
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya IGBT : -
    Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
    Sasa - Mtoza (Ic) (Max) : 6A
    Sasa - Mtoza Ushuru (Icm) : 24A
    Vce (on) (Max) @ Vge, Ic : 2V @ 15V, 3A
    Nguvu - Max : 33W
    Kubadilisha Nishati : 85µJ (on), 245µJ (off)
    Aina ya Kuingiza : Standard
    Malango ya Lango : 10.8nC
    Td (on / off) @ 25 ° C : -
    Hali ya Uchunguzi : 480V, 3A, 82 Ohm, 15V
    Rudisha Wakati wa Kuokoa (trr) : -
    Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
    Kifurushi cha Kifaa cha Mtoaji : TO-252AA