Nambari ya Sehemu :
HGTD3N60C3S9A
Mzalishaji :
ON Semiconductor
Maelezo :
IGBT 600V 6A 33W TO252AA
Hali ya Sehemu :
Obsolete
Voltage - Kukusanya Emitter Kuvunja (Max) :
600V
Sasa - Mtoza (Ic) (Max) :
6A
Sasa - Mtoza Ushuru (Icm) :
24A
Vce (on) (Max) @ Vge, Ic :
2V @ 15V, 3A
Kubadilisha Nishati :
85µJ (on), 245µJ (off)
Aina ya Kuingiza :
Standard
Malango ya Lango :
10.8nC
Td (on / off) @ 25 ° C :
-
Hali ya Uchunguzi :
480V, 3A, 82 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
-
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji :
TO-252AA