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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. AS6C2008-55BINTR

Alliance Memory, Inc. - AS6C2008-55BINTR

KEY Part #: K942509

AS6C2008-55BINTR Bei (USD) [48217pcs Hisa]

  • 1 pcs$0.90614
  • 2,000 pcs$0.90163
Nambari ya Sehemu:
AS6C2008-55BINTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC SRAM 2M PARALLEL 36TFBGA. SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Wasimamizi, Mantiki - Gates na Inverters - Kazi nyingi, Kudhib, Maingiliano - I / O Wapanuaji, Logic - Gates na Inverters, Iliyoingizwa - Microcontroller, Microprocessor, Mo, Iliyoingizwa - FPGAs (Ardhi inayopangwa kwa Mlango, Chips za IC and PMIC - Uuzaji wa Nishati ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS6C2008-55BINTR electronic components. AS6C2008-55BINTR can be shipped within 24 hours after order. If you have any demands for AS6C2008-55BINTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS6C2008-55BINTR Sifa za Bidhaa

Nambari ya Sehemu : AS6C2008-55BINTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC SRAM 2M PARALLEL 36TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : SRAM
Teknolojia : SRAM - Asynchronous
Saizi ya kumbukumbu : 2Mb (256K x 8)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 55ns
Wakati wa Upataji : 55ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.7V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 36-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 36-TFBGA (6x8)

Habari mpya kabisa

Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory Low Power CMOS SRAM
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