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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. AS4C16M16D1-5BINTR

Alliance Memory, Inc. - AS4C16M16D1-5BINTR

KEY Part #: K940760

AS4C16M16D1-5BINTR Bei (USD) [31721pcs Hisa]

  • 1 pcs$1.45179
  • 2,500 pcs$1.44457
Nambari ya Sehemu:
AS4C16M16D1-5BINTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 256M PARALLEL 60TFBGA. DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kusudi Maalum la Sauti, Iliyoingizwa - PLDs (Kifaa cha mantiki cha Mpangil, Maingiliano - vituo vya Ishara, PMIC - Udhibiti / Usimamizi wa sasa, PMIC - Udhibiti wa Mabadiliko ya Moto, Kumbukumbu - Watawala, Upataji wa data - Potentiometers za dijiti and Iliyoingizwa - DSP (Wasindikaji wa Ishara ya Dijit ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C16M16D1-5BINTR electronic components. AS4C16M16D1-5BINTR can be shipped within 24 hours after order. If you have any demands for AS4C16M16D1-5BINTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C16M16D1-5BINTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C16M16D1-5BINTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 256M PARALLEL 60TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR
Saizi ya kumbukumbu : 256Mb (16M x 16)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 700ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.3V ~ 2.7V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TFBGA (8x13)

Habari mpya kabisa

Alliance Memory Low Power CMOS SRAM
Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low-Power DDR2 SDRAM
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