Infineon Technologies - AIHD10N60RFATMA1

KEY Part #: K6422400

AIHD10N60RFATMA1 Bei (USD) [97022pcs Hisa]

  • 1 pcs$0.40301
  • 2,500 pcs$0.33311

Nambari ya Sehemu:
AIHD10N60RFATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IC DISCRETE 600V TO252-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Moja, Thyristors - TRIAC and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in Infineon Technologies AIHD10N60RFATMA1 electronic components. AIHD10N60RFATMA1 can be shipped within 24 hours after order. If you have any demands for AIHD10N60RFATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AIHD10N60RFATMA1 Sifa za Bidhaa

Nambari ya Sehemu : AIHD10N60RFATMA1
Mzalishaji : Infineon Technologies
Maelezo : IC DISCRETE 600V TO252-3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
Sasa - Mtoza (Ic) (Max) : 20A
Sasa - Mtoza Ushuru (Icm) : 30A
Vce (on) (Max) @ Vge, Ic : 2.5V @ 15V, 10A
Nguvu - Max : 150W
Kubadilisha Nishati : 190µJ (on), 160µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 64nC
Td (on / off) @ 25 ° C : 12ns/168ns
Hali ya Uchunguzi : 400V, 10A, 26 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -40°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3-313