Taiwan Semiconductor Corporation - RS1DL M2G

KEY Part #: K6437497

RS1DL M2G Bei (USD) [2200504pcs Hisa]

  • 1 pcs$0.01681

Nambari ya Sehemu:
RS1DL M2G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
DIODE GEN PURP 200V 800MA SUBSMA.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Taiwan Semiconductor Corporation RS1DL M2G electronic components. RS1DL M2G can be shipped within 24 hours after order. If you have any demands for RS1DL M2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1DL M2G Sifa za Bidhaa

Nambari ya Sehemu : RS1DL M2G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : DIODE GEN PURP 200V 800MA SUBSMA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 800mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 800mA
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 150ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 200V
Uwezo @ Vr, F : 10pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-219AB
Kifurushi cha Kifaa cha Mtoaji : Sub SMA
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

Unaweza pia Kuvutiwa Na
  • GL34G/1

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213.

  • NSB8JT-E3/45

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers 600 Volt 8.0 Amp 125 Amp IFSM

  • NSB8KT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A TO263AB. Rectifiers 800 Volt 8.0 Amp 125 Amp IFSM

  • NSB8MT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM

  • NSB8JT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers RECOMMENDED ALT 625-NSB8JT-E3

  • MBRB10H100-E3/45

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 100V 10A TO263AB. Schottky Diodes & Rectifiers 100 Volt 10A Single 250 Amp IFSM