Vishay Semiconductor Diodes Division - UH1B-E3/5AT

KEY Part #: K6446736

UH1B-E3/5AT Bei (USD) [1664pcs Hisa]

  • 7,500 pcs$0.04049

Nambari ya Sehemu:
UH1B-E3/5AT
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 1A DO214AC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division UH1B-E3/5AT electronic components. UH1B-E3/5AT can be shipped within 24 hours after order. If you have any demands for UH1B-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH1B-E3/5AT Sifa za Bidhaa

Nambari ya Sehemu : UH1B-E3/5AT
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 1A DO214AC
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.05V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 30ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 100V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : DO-214AC (SMA)
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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