Vishay Semiconductor Diodes Division - ES2AHE3_A/I

KEY Part #: K6457371

ES2AHE3_A/I Bei (USD) [471758pcs Hisa]

  • 1 pcs$0.07840
  • 6,400 pcs$0.07105

Nambari ya Sehemu:
ES2AHE3_A/I
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20ns SMB, UF Rect, SMD
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Transistors - JFETs and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division ES2AHE3_A/I electronic components. ES2AHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES2AHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2AHE3_A/I Sifa za Bidhaa

Nambari ya Sehemu : ES2AHE3_A/I
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 50V 2A DO214AA
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Sasa - Wastani Aliyerekebishwa (Io) : 2A
Voltage - Mbele (Vf) (Max) @ Kama : 900mV @ 2A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 20ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 50V
Uwezo @ Vr, F : 18pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AA, SMB
Kifurushi cha Kifaa cha Mtoaji : DO-214AA (SMB)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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