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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
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  5. AS6C1008-55BIN

Alliance Memory, Inc. - AS6C1008-55BIN

KEY Part #: K942588

AS6C1008-55BIN Bei (USD) [49268pcs Hisa]

  • 1 pcs$0.88681
  • 480 pcs$0.88240
Nambari ya Sehemu:
AS6C1008-55BIN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC SRAM 1M PARALLEL 36TFBGA. SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Swichi za Analog, Multiplexers, Demu, Mantiki - Vipimo, Mantiki - Latches, Maingiliano - vichungi - Inayotumika, Iliyoingizwa - Microprocessors, Linear - Amplifiers - Sauti, Linear - Analog Multipliers, Dialers and PMIC - Vidhibiti vya Voltage - Linear ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS6C1008-55BIN electronic components. AS6C1008-55BIN can be shipped within 24 hours after order. If you have any demands for AS6C1008-55BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS6C1008-55BIN Sifa za Bidhaa

Nambari ya Sehemu : AS6C1008-55BIN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC SRAM 1M PARALLEL 36TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : SRAM
Teknolojia : SRAM - Asynchronous
Saizi ya kumbukumbu : 1Mb (128K x 8)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 55ns
Wakati wa Upataji : 55ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.7V ~ 5.5V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 36-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 36-TFBGA (6x8)

Habari mpya kabisa

Alliance Memory Low Power CMOS SRAM
Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory MT41x DDR3 SDRAMs
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