NGTD17R120F2WP Bei (USD) [78128pcs Hisa]
- 1 pcs$0.50047
- 527 pcs$0.43791
- Nambari ya Sehemu:
- NGTD17R120F2WP
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- DIODE GEN PURP 1.2KV DIE.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor NGTD17R120F2WP electronic components. NGTD17R120F2WP can be shipped within 24 hours after order. If you have any demands for NGTD17R120F2WP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTD17R120F2WP Sifa za Bidhaa
Nambari ya Sehemu :
NGTD17R120F2WP
Mzalishaji :
ON Semiconductor
Maelezo :
DIODE GEN PURP 1.2KV DIE
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
1200V
Sasa - Wastani Aliyerekebishwa (Io) :
-
Voltage - Mbele (Vf) (Max) @ Kama :
1.8V @ 35A
Kasi :
-
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
1µA @ 1200V
Uwezo @ Vr, F :
-
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
Die
Kifurushi cha Kifaa cha Mtoaji :
Die
Joto la Kufanya kazi - Junction :
175°C (Max)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
VS-HFA04SD60S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 4A TO252AA. Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED
-
SFA808G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC. Rectifiers 35ns8A 600V Sp Fst Recov Rectifier
-
-
-
-
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