Vishay Siliconix - SQ2310ES-T1_GE3

KEY Part #: K6419143

SQ2310ES-T1_GE3 Bei (USD) [262736pcs Hisa]

  • 1 pcs$0.14078
  • 3,000 pcs$0.11923

Nambari ya Sehemu:
SQ2310ES-T1_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 20V 6A SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQ2310ES-T1_GE3 electronic components. SQ2310ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2310ES-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ2310ES-T1_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQ2310ES-T1_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 20V 6A SOT23
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 30 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 8.5nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 485pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-236
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3