Nambari ya Sehemu :
IPI084N06L3GXKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO262-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
8.4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 34µA
Malango ya Lango (Qg) (Max) @ Vgs :
29nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4900pF @ 30V
Kuondoa Nguvu (Max) :
79W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO262-3-1
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA