Microsemi Corporation - APTGTQ100DDA65T3G

KEY Part #: K6533024

APTGTQ100DDA65T3G Bei (USD) [1877pcs Hisa]

  • 1 pcs$23.06400

Nambari ya Sehemu:
APTGTQ100DDA65T3G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
POWER MODULE - IGBT.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Kusudi Maalum and Thyristors - SCR ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGTQ100DDA65T3G Sifa za Bidhaa

Nambari ya Sehemu : APTGTQ100DDA65T3G
Mzalishaji : Microsemi Corporation
Maelezo : POWER MODULE - IGBT
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : -
Usanidi : Dual Boost Chopper
Voltage - Kukusanya Emitter Kuvunja (Max) : 650V
Sasa - Mtoza (Ic) (Max) : 100A
Nguvu - Max : 250W
Vce (on) (Max) @ Vge, Ic : 2.2V @ 15V, 100A
Sasa - Ushuru Mtoaji : 100µA
Uingilivu Ufungaji (Wakuu) @ Vce : 6nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : Yes
Joto la Kufanya kazi : -40°C ~ 175°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : SP3F