Nambari ya Sehemu :
NHPM120T3G
Mzalishaji :
ON Semiconductor
Maelezo :
DIODE GEN PURP 200V 1A POWERMITE
Voltage - DC Reverse (Vr) (Max) :
200V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1V @ 1A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
25ns
Sasa - Rejea kuvuja @ Vr :
500nA @ 200V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-216AA
Kifurushi cha Kifaa cha Mtoaji :
Powermite
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C