SQJ912AEP-T1_GE3 Bei (USD) [152759pcs Hisa]
- 1 pcs$0.24213
- 3,000 pcs$0.20465
- Nambari ya Sehemu:
- SQJ912AEP-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 40V 30A PPAK SO-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Viwango - RF, Thyristors - TRIAC, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQJ912AEP-T1_GE3 electronic components. SQJ912AEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ912AEP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ912AEP-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQJ912AEP-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 40V 30A PPAK SO-8
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
30A
Njia ya Kutumia (Max) @ Id, Vgs :
9.3 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
38nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1835pF @ 20V
Nguvu - Max :
48W
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SO-8 Dual
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