MUN5212DW1T1G Bei (USD) [1941486pcs Hisa]
- 1 pcs$0.01905
- 3,000 pcs$0.01758
- 6,000 pcs$0.01528
- 15,000 pcs$0.01299
- 30,000 pcs$0.01222
- 75,000 pcs$0.01146
- 150,000 pcs$0.01019
- Nambari ya Sehemu:
- MUN5212DW1T1G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- TRANS 2NPN PREBIAS 0.25W SOT363.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor MUN5212DW1T1G electronic components. MUN5212DW1T1G can be shipped within 24 hours after order. If you have any demands for MUN5212DW1T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MUN5212DW1T1G Sifa za Bidhaa
Nambari ya Sehemu :
MUN5212DW1T1G
Mzalishaji :
ON Semiconductor
Maelezo :
TRANS 2NPN PREBIAS 0.25W SOT363
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 NPN - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
22 kOhms
Upinzani - Base ya Emitter (R2) :
22 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
60 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
250mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
SC-88/SC70-6/SOT-363
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